Kentaro Nakajima - English to Japanese translator. Translation services in Automotive / Cars & Trucks - Japanese, electronics, material science, medical, phyisics, semiconductor

Member since Feb '19

Working languages:

English to Japanese
Japanese to English
German to Japanese
Japanese (monolingual)

Kentaro Nakajima
Freelance Translator, Ph.D

Japan

Local time: 08:21 JST (GMT+9)

Native in: Japanese

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Editing/proofreading, Translation, MT post-editing

Specializes in:
Automotive / Cars & Trucks	Aerospace / Aviation / Space
Computers: Hardware	Computers: Software
Computers: Systems, Networks	Electronics / Elect Eng
Energy / Power Generation	Engineering (general)
Engineering: Industrial	IT (Information Technology)

4 entries

Sample translations submitted: 2

Japanese to English: Japanese Patent Laid-Open No.2021-015839 General field: Law/Patents Detailed field: Electronics / Elect Eng
Source text - Japanese 二つの強磁性層の磁化の相対角の変化に基づく抵抗値変化（磁気抵抗変化）を利用した素子として、強磁性層と非磁性層の多層膜からなる巨大磁気抵抗（ＧＭＲ）素子、及び、非磁性層に絶縁層（トンネルバリア層、バリア層）を用いたトンネル磁気抵抗（ＴＭＲ）素子等が知られている。近年、磁気抵抗変化を利用したスピン素子の中でも、スピン軌道トルク（ＳＯＴ）を利用した素子や、磁壁の移動を利用した素子に注目が集まっている。例えば、特許文献１にはスピン軌道トルクを利用した磁気記録素子が記載されている。ＳＯＴは、スピン軌道相互作用によって生じた純スピン流又は異種材料の界面におけるラシュバ効果により誘起される。磁気抵抗効果素子内にＳＯＴを誘起するための電流は、磁気抵抗効果素子の積層方向と交差する方向に流す。磁気抵抗効果素子の積層方向に電流を流す必要がなく、磁気抵抗効果素子の長寿命化が期待されている。また例えば、特許文献２には磁壁移動型の磁気記録素子が記載されている。磁壁移動型の磁気記録素子は、磁気記録層内における磁壁を移動させることで、抵抗値変化が段階的になる。抵抗値が段階的に変化することで、多値のデータ記録が可能である。また「０」、「１」のデジタル的なデータ記録でなく、アナログ的なデータ記録が可能とされている。スピン軌道トルクを利用した磁気記録素子や磁壁移動型の磁気記録素子等の記憶素子は、データを書き込む際の電流経路と、データを読み出す際の電流経路が異なる。これらの記憶素子は、読み出し電流と書き込み電流をそれぞれ制御するために、複数のスイッチング素子が必要である。つまり、一つの記憶素子を動作させるには、複数のスイッチング素子分の面積を確保する必要がある。	Translation - English As devices that utilize a change in a resistance value (magnetoresistance change) based on a change in a relative angle between magnetizations of the two ferromagnetic layers, giant magnetoresistance (GMR) devices consisting of multilayers of ferromagnetic and nonmagnetic layers, and tunnel magnetoresistance (TMR) devices using an insulating layer (tunnel barrier layer, barrier layer) for the nonmagnetic layer are known. In recent years, spin-orbit torque (SOT) based devices and devices using magnetic wall movement have attracted much attention among spin devices using magnetoresistance change. One example is Patent Document 1, which describes a magnetic recording device using a spin-orbit torque. The purespin currentgenerated by the spin-orbit interaction or by the Rashba effect at the interface of different materials induces SOT The current to induce SOT in the magnetoresistive element flows in a direction intersecting the stacking direction of the magnetoresistive element. Since no current flow in the stacking direction of the magnetoresistive element is necessary, we can expect prolonged life of the magnetoresistive element. Also, Patent Document 2 describes the Domain Wall Seesaw type magnetic recording element. The Domain Wall Seesaw type magnetic recording element exhibits step-by-step change of a resistance value due to movement of magnetic domain walls in the magnetic recording layer. Changing the resistance value step by step enables multi-valued data recording. In addition, analog data recording is possible instead of digital data recording of "0" and "1". Storage elements such as magnetic recording elements using spin-orbit torque and the domain wall motion type magnetic recording elements have a current path for writing data and a current path for reading data separately. These storage elements require multiple switching elements to control the read and write currents, respectively. In other words, operation of a single storage element needs enlarged area for multiple switching elements.
English to Japanese: WO2019006066 General field: Law/Patents Detailed field: Electronics / Elect Eng
Source text - English Semiconductor storage devices are used in integrated circuits (ICs) in electronic devices to provide data storage. One example of a semiconductor storage device is magneto-resistive random-access memory (MRAM). MRAM is non- volatile memory in which data is stored by programming a magnetic tunnel junction (MTJ) as part of an MRAM bit cell. One advantage of MRAM is that MTJs in MRAM bit cells can retain stored information even when power is turned off. This is because data is stored in the MTJ as a small magnetic element rather than as an electric charge or current. In this regard, an MTJ comprises a free ferromagnetic layer ("free layer") disposed above or below a fixed or pinned ferromagnetic layer ("pinned layer"). The free and pinned layers are separated by a tunnel junction or barrier formed by a thin non-magnetic dielectric layer. The magnetic orientation (i.e., the magnetic moment direction) of the free layer can be changed, but the magnetic orientation of the pinned layer remains fixed or "pinned." Data can be stored in the MTJ according to the magnetic orientation between the free and pinned layers. When the magnetic orientations of the free and pinned layers are anti-parallel (AP) to each other, a first memory state exists (e.g., a logical T). When the magnetic orientations of the free and pinned layers are parallel (P) to each other, a second memory state exists (e.g., a logical 'Ο'). The magnetic orientations of the free and pinned layers can be sensed to read data stored in the MTJ by sensing a resistance when current flows through the MTJ. Data can also be written and stored in the MTJ by applying a magnetic field to change the orientation of the free layer to either a P or AP magnetic orientation with respect to the pinned layer. Recent developments in MTJ devices involve spin-transfer torque (STT)-MTJ devices. In STT-MTJ devices, the spin polarization of carrier electrons, rather than a pulse of a magnetic field, is used to program the state stored in the MTJ (i.e., a '0' or a T). Figure 1 illustrates an STT-MTJ device 100 (hereinafter "MTJ device 100").	Translation - Japanese 半導体記憶装置は、電子機器の集積回路（IC）において、データの記憶を提供するために使用される。半導体記憶装置の一例として、磁気抵抗ランダムアクセスメモリ（MRAM）がある。MRAMは不揮発性メモリであり、MRAMのビットセルの一部としての磁気トンネル接合（MTJ）をプログラミングしデータを格納する。MRAMの利点としては、MRAMビットセルのMTJは電源を切っても蓄積された情報を保持できることが挙げられる。これは、データが電荷や電流としてではなく、小さな磁性体としてMTJに格納されているからである。 MTJは、固定またはピン留めされた強磁性層（「ピン留め層」）の上または下に配置された自由な強磁性層（「自由層」）から構成される。フリー層とピン留め層は、薄い非磁性誘電体層によって形成されたトンネル接合またはバリアによって分離されている。自由層の磁気的配向（すなわち、磁気モーメント方向）は変更することができるが、ピン留め層の磁気配向は固定されたままであるか、"ピン留め"されたままである。自由層とピン留め層との間の磁気的配向の違いにより、MTJにデータを格納することができる。自由層とピン留め層の磁気的配向が互いに反平行（AP）であるとき、第１の記憶状態が存在する（例えば、論理T）。自由層と固定層の磁気的配向が互いに平行（P）であるとき、第２の記憶状態が存在する（例えば、論理'Ο'）。MTJに電流が流れたときに抵抗値を読み取ることで、フリー層とピン留め層の磁気的な配向を検出でき、MTJに記憶されたデータを読み取ることが可能である。さらに、磁場を印加して自由層の向きをピン止め層に対してＰまたはＡＰのいずれかの磁気的な向きに変化させ、MTJにデータを書き込み記憶させることも可能である。 MTJデバイスにおける最近の開発は、スピントランスファートルク（STT）-MTJデバイスを含む。STT-MTJデバイスでは、磁場のパルスではなく、キャリア電子のスピン分極が、MTJに格納された状態（すなわち、'0'またはT）がプログラムに使用される。図１は、STT-MTJ装置100（以下、「MTJ装置100」と参照する。）を示す。

PhD - Tohoku University

Years of experience: 17. Registered at ProZ.com: Dec 2018. Became a member: Feb 2019.

Japanese (Tohoku University, verified)

N/A

Adobe Acrobat, Idiom, MateCat, memoQ, MemSource Cloud, Microsoft Excel, Microsoft Word, Powerpoint, Smartcat, Trados Studio, Translation Workspace, XTM

English (PDF)

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Bio

In 2023, I was involved in over 400 projects, translating around 1 million words.

Some projects I involved in include:

Industrial devices and equipment

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Manuals, industrial equipment and consumables (including
DE>JP)

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Manuals, industrial robots, factory automation system (including
DE>JP)

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Manuals, agricultural machinery, food industrial
machinery, construction machinery, gas turbines

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Manuals and general articles, 3D printers (including
DE>JP)

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Manuals and blog articles, drones

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Manuals and general articles, aerospace and defense

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Web site articles, maritime

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Manuals and general articles, green energy including wind
turbine, solar, hydrogen.

Electronics

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Manuals, Semiconductor devices, optical devices

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Marketing materials, blog articles

Automotive

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Manual and specification, Training materials(subtitling)
for British, German and manufacturers (including DE>JP)

Software and UIs

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Manuals and general articles, collaborative software (including
DE>JP)

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Manuals and general articles, AI, CAD and cyber-security
software

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Marketing materials

IT technology and Cyber security

-　Technical/marketing content

-　Help articles

-　Blog article

Technology and Engineering Human resources

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Internal training materials (including DE>JP)

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Code of Conduct, Company rules

E-commerce

Medical translation

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Manuals and specifications of medical instrument,
including MRI, CT, respirators, vessel catheter, urinary catheter, tracheal intubation,
surgical instrument, Laryngectomy, dental instruments.

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Protocols

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Trial agreements

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Informed Consent Form

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Trial drug marketing research materials

Patent translation

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Specifications (including DE>JP)

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Abstract JP>EN translation projects from Japan
Patent Office

Keywords: Japanese, electronics, material science, medical, phyisics, semiconductor

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